Accepted version, 267.2Kb
Dao, N. C., Kass, A. E., Azghadi, M. R., Jin, C. T., Scott, J. B., & Leong, P. H. W. (2017). An enhanced MOSFET threshold voltage model for the 6–300 K temperature range. Microelectronics Reliability, 69, 36–39. https://doi.org/10.1016/j.microrel.2016.12.007
Permanent Research Commons link: http://hdl.handle.net/10289/11154
An enhanced threshold voltage model for MOSFETs operating over a wide range of temperatures (6–300K) is presented. The model takes into account the carrier freeze-out effect and the external field-assisted ionization to address the temperature dependence of MOS transistors. For simplicity, an empirical function is incorporated to predict short channel effects over the temperature range. The results from the proposed model demonstrate good agreement with NMOS and PMOS transistors measured from fabricated chips.
This is an author’s accepted version of an article published in the journal: Microelectronics Reliability. © 2016 Elsevier Ltd