Hydrogen bonding in hydroxymethylphosphine chalcogenides

dc.contributor.author	Goodwin, Nicholas J.	en_US
dc.contributor.author	Henderson, William	en_US
dc.contributor.author	Nicholson, Brian K.	en_US
dc.date.accessioned	2008-03-19T05:08:18Z
dc.date.available	2007-11-14	en_US
dc.date.available	2008-03-19T05:08:18Z
dc.date.issued	2002-06-01	en_US
dc.identifier.citation	Goodwin, N.J., Henderson, W. & Nicholson, B.K. (2002). Hydrogen bonding in hydroxymethylphosphine chalcogenides. Inorganica Chimica Acta 335, 113-118.	en_US
dc.identifier.uri	http://hdl.handle.net/10289/170
dc.description.abstract	Hydrogen bonding in the phosphine chalcogenide series Ph2P(X)CH2OH (X=O, 1; S, 2; Se, 3) has been investigated by single crystal X-ray crystallography. While the phosphine oxide exhibits a dimer motif, the sulfide and selenide form infinite chains; in all cases hydrogen bonding is from the OH group to the phosphine chalcogenide heteroatom. The trend in the hydrogen bond angle for OH X-P, which is 117, 87 and 84° for the oxide, sulfide and selenide, respectively, is explained with respect to the geometry of electron density on the phosphine chalcogenide heteroatom.	en_US
dc.language.iso	en
dc.relation.uri	http://www.sciencedirect.com.ezproxy.waikato.ac.nz:2048/science?_ob=ArticleURL&_udi=B6TG5-45DF95M-3&_user=100025&_coverDate=06%2F27%2F2002&_rdoc=16&_fmt=summary&_orig=browse&_srch=doc-info(%23toc%235245%232002%23996649999%23321264%23FLA%23display%23Volume)&_cdi=5245&_sort=d&_docanchor=&view=g&_ct=24&_acct=C000007699&_version=1&_urlVersion=0&_userid=100025&md5=e849bc653833805bc61356deb77156ba	en_US
dc.rights	This article is published in the journal Inorganica Chimica Acta, (c) 2002 Elsevier Science B.V.	en_US
dc.subject	Crystal structures	en_US
dc.subject	Hydrogen bonding	en_US
dc.subject	Phosphine oxide	en_US
dc.subject	Phosphine sulphide	en_US
dc.subject	Phosphine selenide	en_US
dc.title	Hydrogen bonding in hydroxymethylphosphine chalcogenides	en_US
dc.type	Journal Article	en_US
dc.identifier.doi	10.1016/S0020-1693(02)00811-3	en_US