New thermocouple-based microwave/millimeter-wave power sensor MMIC techniques in GaAs
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Abstract
We describe a new RF and microwave power sensor monolithic microwave integrated circuit design. The circuit incorporates a number of advances over existing designs. These include a III–V epitaxial structure optimized for sensitivity, the figure-of-merit applicable to the optimization, a mechanism for in-built detection of load ageing and damage to extend calibration intervals, and a novel symmetrical structure to linearize the high-power end of the scale.
Citation
Scott, J.B., Low, T.S., Cochran, S., Keppeler, B., Staroba, J. & Yeats, B. (2010). New thermocouple-based microwave/millimeter-wave power sensor MMIC techniques in GaAs. IEEE Transactions on Microwave Theory and Techniques, 59(2), 338-344.
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IEEE