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New thermocouple-based microwave/millimeter-wave power sensor MMIC techniques in GaAs

Abstract
We describe a new RF and microwave power sensor monolithic microwave integrated circuit design. The circuit incorporates a number of advances over existing designs. These include a III–V epitaxial structure optimized for sensitivity, the figure-of-merit applicable to the optimization, a mechanism for in-built detection of load ageing and damage to extend calibration intervals, and a novel symmetrical structure to linearize the high-power end of the scale.
Type
Journal Article
Type of thesis
Series
Citation
Scott, J.B., Low, T.S., Cochran, S., Keppeler, B., Staroba, J. & Yeats, B. (2010). New thermocouple-based microwave/millimeter-wave power sensor MMIC techniques in GaAs. IEEE Transactions on Microwave Theory and Techniques, 59(2), 338-344.
Date
2010
Publisher
IEEE
Degree
Supervisors
Rights
© 2010 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.