Performance and applications of Gallium-Nitride Monolithic Microwave Integrated Circuits (GaN MMICs)

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dc.contributor.authorScott, Jonathan B.
dc.contributor.authorParker, Anthony Edward
dc.coverage.spatialConference held at Canberra, Australiaen_NZ
dc.date.accessioned2008-11-27T20:05:19Z
dc.date.available2008-11-27T20:05:19Z
dc.date.issued2007-12
dc.description.abstractThe evolution of wide-bandgap semiconductor transistor technology is placed in historical context with other active device technologies. The relative rapidity of GaN transistor development is noted and is attributed to the great parallel activity in the lighting sector and the historical experience and business model from the III-V compound semiconductor sector. The physical performance expectations for wide-bandgap technologies such as Gallium-Nitride Field-E®ect Transistors (GaN FETs) are reviewed. We present some device characteristics. Challenges met in characterising, and prospects for modeling GaN FETs are described. Reliability is identified as the final remaining hurdle facing would-be foundries. Evolutionary and unsurprising applications as well as novel and revolutionary applications are suggested. Novel applications include wholly monolithic switchmode power supplies, simplified tools for ablation and diathermy in tissue, and very wide dynamic range circuits for audio or low phase noise signal generation. We conclude that now is the time to embark on circuit design of MMICs in wide-bandgap technology. The potential for fabless design groups to capitalise upon design IP without strong geopraphic advantage is noted.en_US
dc.format.mimetypeapplication/pdf
dc.format.mimetypeapplication/pdf
dc.identifier.citationScott, J. B. & Parker, A. E. (2007). Performance and applications of Gallium-Nitride Monolithic Microwave Integrated Circuits (GaN MMICs). Proceedings of SPIE, December 5, volume 6798, 67980F, 2007. Canberra, ACT, Australia.en_US
dc.identifier.doihttp://dx.doi.org/10.1117/12.764253en_US
dc.identifier.urihttps://hdl.handle.net/10289/1484
dc.language.isoen
dc.publisherSPIEen_NZ
dc.relation.isPartOfProceedings of SPIE: Microelectronic, MEMS, and Nanotechnologyen_NZ
dc.rights©2007 COPYRIGHT SPIE--The International Society for Optical Engineering.en_US
dc.subjectGallium Nitrideen_US
dc.subjectwide-bandgapen_US
dc.subjectMMICen_US
dc.subjectcompound semiconductoren_US
dc.subjectcircuit designen_US
dc.titlePerformance and applications of Gallium-Nitride Monolithic Microwave Integrated Circuits (GaN MMICs)en_US
dc.typeConference Contributionen_US
pubs.begin-page1en_NZ
pubs.elements-id17461
pubs.end-page12en_NZ
pubs.finish-date2007-12-07en_NZ
pubs.start-date2007-12-04en_NZ
pubs.volume6798en_NZ
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